IRFU5305 P-channel Hexfet Power MOSFET
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
P-Channel
On Resistance of 0.065R
- Description
- MOSFET, P, -55V, -28A, I-PAK
- Transistor Polarity:P
- Current Id Max:-31A
- Drain Source Voltage Vds:55V
- On Resistance Rds(on):0.065ohm
- Rds(on) Test Voltage Vgs:-10V
- Voltage Vgs Max:-4V
- Power Dissipation:110W
- Transistor Case Style:I-PAK
- No. of Pins:3
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